琉化鋅晶體光學材料作為一個重要的二,六化合物半導體,硫化鋅納米材料已經(jīng)引起了極大的關注,不僅因為其出色的物理特性,如能帶隙寬,高折射率,高透光率在可見光范圍內,而且其巨大的潛力應用光學,電子和光電子器件。硫化鋅具有優(yōu)良的熒光效應及電致發(fā)光功能,納米硫化鋅更具有的光電效應,在電學、磁學、光學、力學和催化等領域呈現(xiàn)出許多優(yōu)異的性能,因此納米硫化鋅的研究引起了更多人的重視,尤其是1994年Bhargava報道了經(jīng)表面鈍化處理的納米ZnS:Mn熒光粉在高溫下不僅有高達18% 的外量子效率,其熒光壽命縮短了5個數(shù)量級,而且發(fā)光性能有了很大的變化,更為ZnS在材料中的應用開辟了一條新途徑??捎糜谥瓢咨念伭霞安A?、發(fā)光粉、橡膠、塑料、發(fā)光油漆等。
Zinc sulfide is commonly used for IR optics, substrates and as a source for evaporation.
琉化鋅晶體光學材料Basic properties |
Structure: | Cubic (zincblende) | Density: | 4.08 g/ cm3 | Knoop Hardness: | 210 kg/ mm2 | Young’s Modulus: | 10.8 Mpsi | Poisson Ratio: | 0.27 | Coef. of Thermal Expansion: | 6.8×10-6/K | Specific Heat: | 0.469 J/gK | Thermal conductivity (at 25 °C): | 0.16 W/cmK | Max. Transmittance (λ=7-12 μm): | ≥ 71 % | Absorption Coef. (λ=10.6 μm): | ≤0.15 cm-1(including 2 surfaces) | Thermo-Optic Coef. (dn/dT): | 4.7 (λ =10.6 μm) | Refractive index (λ=10.6 μm): | 2.34 | Electrooptical coefficient r41 (λ=10.6 μm): | 2×10-12 m/V | Max. crystal diameter/length: | ?38×30 mm |
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ZnS Transmission
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Products
ZnS rods, wafers and substrates |
Diameter/Width | 1-38 mm | Thickness/length | 0.1-150 mm | Orientation | (110) | Surface quality | As-cut, 80/50, 60/40 per MIL-0-13830 |
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ZnS crystal pieces for vapour deposition. |
Purity | 99.995%, 99.999% | Particle size | 0.01- 10 mm |
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